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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). Complementary to KTC9014S. A G L KTC9015S EPITAXIAL PLANAR PNP TRANSISTOR E B L Low Noise :NF=1dB(Typ.) at f=1kHz. 2 3 1 P P N C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC * Tj Tstg -50 -50 -5 -150 150 350 150 -55 150 0.6 ) V V V mA mA mW 1. EMITTER 2. BASE 3. COLLECTOR K CHARACTERISTIC SYMBOL RATING UNIT M SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 Marking h FE Rank Lot No. Type Name BE ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification B:100 300, SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF C:200 600 ) TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA, Rg=10k , f=1kHz MIN. 100 60 TYP. -0.1 4.0 1.0 MAX. -50 -100 600 -0.3 7.0 10 V MHz pF dB UNIT nA nA 2002. 9. 3 Revision No : 0 J MAXIMUM RATING (Ta=25 ) DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 H D 1/1 |
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